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MULTILAYER REFLECTORS BY MOLECULAR-BEAM EPITAXY FOR RESONANCE ENHANCED ABSORPTION IN THIN HIGH-SPEED DETECTORS
被引:73
作者
:
CHIN, A
论文数:
0
引用数:
0
h-index:
0
CHIN, A
CHANG, TY
论文数:
0
引用数:
0
h-index:
0
CHANG, TY
机构
:
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
1990年
/ 8卷
/ 02期
关键词
:
D O I
:
10.1116/1.585066
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:339 / 342
页数:4
相关论文
共 6 条
[1]
Antreasyan A., 1989, IEEE Photonics Technology Letters, V1, P123, DOI 10.1109/68.36009
[2]
HIGH-SPEED MONOLITHIC GAINAS PINFET
MIURA, S
论文数:
0
引用数:
0
h-index:
0
MIURA, S
MIKAWA, T
论文数:
0
引用数:
0
h-index:
0
MIKAWA, T
FUJII, T
论文数:
0
引用数:
0
h-index:
0
FUJII, T
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
[J].
ELECTRONICS LETTERS,
1988,
24
(07)
: 394
-
395
[3]
TELL B, 1984, IEEE T ELECTRON DEV, V32, P1656
[4]
HIGH REFLECTIVITY GAAS-ALGAAS MIRRORS FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
THORNTON, RL
论文数:
0
引用数:
0
h-index:
0
THORNTON, RL
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
STREIFER, W
论文数:
0
引用数:
0
h-index:
0
STREIFER, W
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(10)
: 1028
-
1030
[5]
WADA O, 1987, INT ELECTRON DEVICES
[6]
ZEGHBROECK BJV, 1987, INT ELECTRON DEVICES
←
1
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共 6 条
[1]
Antreasyan A., 1989, IEEE Photonics Technology Letters, V1, P123, DOI 10.1109/68.36009
[2]
HIGH-SPEED MONOLITHIC GAINAS PINFET
MIURA, S
论文数:
0
引用数:
0
h-index:
0
MIURA, S
MIKAWA, T
论文数:
0
引用数:
0
h-index:
0
MIKAWA, T
FUJII, T
论文数:
0
引用数:
0
h-index:
0
FUJII, T
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
[J].
ELECTRONICS LETTERS,
1988,
24
(07)
: 394
-
395
[3]
TELL B, 1984, IEEE T ELECTRON DEV, V32, P1656
[4]
HIGH REFLECTIVITY GAAS-ALGAAS MIRRORS FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
THORNTON, RL
论文数:
0
引用数:
0
h-index:
0
THORNTON, RL
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
STREIFER, W
论文数:
0
引用数:
0
h-index:
0
STREIFER, W
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(10)
: 1028
-
1030
[5]
WADA O, 1987, INT ELECTRON DEVICES
[6]
ZEGHBROECK BJV, 1987, INT ELECTRON DEVICES
←
1
→