THE EFFECT OF THERMAL AND RADIATION DEFECTS ON THE RECOMBINATION PROPERTIES OF THE BASE REGION OF DIFFUSED SILICON P-N STRUCTURES

被引：12

作者：

KUCHINSKII, PV

LOMAKO, VM

机构：

[1] V. I. Lenin Byelorussian State Univ, Minsk, USSR, V. I. Lenin Byelorussian State Univ, Minsk, USSR

来源：

关键词：

D O I：

10.1016/0038-1101(86)90104-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1041 / 1051

页数：11

共 19 条

[1]

BOLTAKS BI, 1972, DIFFUSION POINT DEFE, P384

[2]

CHENNING H, 1979, APPL PHYS LETT, V35, P636

[3]

Glinchuk K. D., 1972, Poluprovodnikovaya Tekhnika i Mikroelektronika, P51

[4]

GLINCHUK KD, 1977, POLUPROVODN TEKH MIK, V25, P17

[5]

GLINCHUK KD, 1979, FIZ TECHN POLUPROVOD, V13, P1927

GUBSKAYA, VI ;

KUCHINSKII, PV ;

LOMAKO, VM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02) :585-590

[7]

GUBSKAYA VI, 1982, FIZ TEKH POLUPROV, V16, P93

[8]

GULIDOV DN, 1976, ELECTRON APPL, V7, P163

[9]

HAYNES J, 1957, PROBLEMY FIZ POLUPRO, P187

[10]

HORNBECK J, 1957, PROBLEMS PHYSICS SEM, P167