THE EFFECT OF THE VACANCY CHARGE STATE ON THE RADIATION DEFECT FORMATION IN SILICON

被引：11

作者：

GUBSKAYA, VI ^{[1
]}

KUCHINSKII, PV ^{[1
]}

LOMAKO, VM ^{[1
]}

机构：

[1] VI LENIN STATE UNIV,MINSK,BESSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 85卷 / 02期

关键词：

D O I：

10.1002/pssa.2210850233

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：585 / 590

页数：6

共 19 条

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SMITH, RS ;

NEWMAN, RC .

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[3]

ERSHOV SN, 1978, THESIS GORKII

[4] ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON [J].

EVWARAYE, AO ;

SUN, E .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :3776-3780

[5]

FRANK W, 1975, I PHYS C SER, V23, P23

[6] DEFECT FORMATION IN HEAVILY DOPED SI UPON IRRADIATION [J].

GUBSKAYA, VI ;

KUCHINSKII, PV ;

LOMAKO, VM .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1981, 55 (1-2) :35-38

[7]

HOFFMANN HJ, 1980, PHYS REV LETT, V45, P1733, DOI 10.1103/PhysRevLett.45.1733

[8]

Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221

[9]

Kimerling L. C., 1979, International Conference on Defects and Radiation Effects in Semiconductors, P273

[10]

KOZLOV IP, 1974, FIZ TEKH POLUPROV, V8, P1431

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