INSITU CALIBRATION OF GROWTH SURFACE-TEMPERATURE FOR MOLECULAR-BEAM EPITAXY OF CDTE

被引：4

作者：

RAJAVEL, D ^{[1
]}

MUELLER, F ^{[1
]}

BENSON, JD ^{[1
]}

WAGNER, BK ^{[1
]}

BENZ, RG ^{[1
]}

SUMMERS, CJ ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584807

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：192 / 195

页数：4

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RAJAVEL, D ;

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