INTEGRATION OF LEDS AND GAAS CIRCUITS BY MBE REGROWTH

被引：7

作者：

GROT, AC ^{[1
]}

PSALTIS, D ^{[1
]}

SHENOY, KV ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.311465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully processed VLSI GaAs MESFET circuits, available through the MOSIS service, have recently been shown to be electrically stable after 3-h thermal cycles at 500-degrees-C. It is therefore feasible to epitaxially regrow photonic device heterostructures directly on high-density electronic circuits yielding monolithic optoelectronic VLSI circuits. The MBE growth, planarization, and LED fabrication of the first optoelectronic circuit using this novel integration technique are described.

引用

页码：819 / 823

页数：5

共 7 条

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[5]

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[6]

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