STRUCTURAL AND ELECTRONIC EVOLUTION ON THE GE(111)-AG SURFACE

被引:15
作者
GOTHELID, M
HAMMAR, M
KARLSSON, UO
WIGREN, C
LELAY, G
机构
[1] STANFORD LINEAR ACCELERATOR CTR,STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94309
[2] CNRS,CTR RECH MECANISMES CROISSANCE CRISTALLINE,F-13288 MARSEILLE 09,FRANCE
来源
PHYSICAL REVIEW B | 1995年 / 52卷 / 19期
关键词
D O I
10.1103/PhysRevB.52.14104
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-resolution core-level photoelectron spectroscopy has been used to study three different silver induced surface reconstructions on the Ge(111) surface. At the lowest coverage a (4 X 4) structure is formed, which displays a similar Ge 3d core-level line shape as the clean c(2 X 8) surface. Details in the spectra are discussed with respect to possible models. The Ge(111)-Ag (root 3 X root 3)R30 degrees structure Ge 3d spectrum is dominated by a very strong contribution assigned to the two topmost Ge layers in a missing top layer structure, similar to the Si(111)-Ag (root 3 X root 3)R30 degrees surface. A weak bulk peak is present on the high-binding-energy side of the spectrum, while a third contribution assigned to Ge in phase boundaries is included in the fit on the lower-binding-energy side. A comparison with results obtained from the Ge(111)-Au root 3 structure points to substantial differences between the two noble-metal-induced root 3 reconstructions on the Ge(111) surface. Finally, after further deposition of silver at room temperature, the root 3 geometry is locally broken creating a (6 X 6) structure and a new surface-related peak emerges on the low-binding-energy side of the Ge 3d spectrum, which was interpreted as being due to Ge atoms floating on top of the outermost surface layer. The valence band also revealed the existence of small metallic silver islands.
引用
收藏
页码:14104 / 14110
页数:7
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