共 26 条
- [1] ELECTRONIC-STRUCTURE OF THE GE(111)-C(2X8) SURFACE [J]. PHYSICAL REVIEW B, 1988, 37 (14): : 8190 - 8197
- [2] CORE-LEVEL STUDY OF THE PHASE-TRANSITION ON THE GE(111)-C(2X8) SURFACE [J]. PHYSICAL REVIEW B, 1988, 38 (06): : 3925 - 3930
- [3] ANDERSEN JN, 1991, SYNCHROTRON RAD NEWS, V4, P15
- [4] ATKINS PW, 1986, PHYSICAL CHEM
- [5] TUNNELING MICROSCOPY OF SILICON AND GERMANIUM - SI(111) 7X7, SNGE(111) 7X7, GESI(111) 5X5, SI(111) 9X9, GE(111) 2X8, GE(100) 2X1, SI(110) 5X1 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 472 - 477
- [6] ATOMIC ORIGINS OF SURFACE CORE LEVELS ON SI(111)-(7X7) STUDIED BY SITE-DEPENDENT GE SUBSTITUTION [J]. PHYSICAL REVIEW B, 1992, 45 (07): : 3811 - 3814
- [7] STRUCTURE OF SN/GE(111) FROM LOW-ENERGY ELECTRON-DIFFRACTION AND PHOTOEMISSION-STUDIES [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2330 - 2337
- [9] DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES [J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7014 - 7018
- [10] ELECTRONIC-STRUCTURE OF THE ANNEALED GE(111) AND SI(111) SURFACES - SIMILARITIES IN LOCAL BONDING [J]. PHYSICAL REVIEW B, 1981, 24 (02): : 1120 - 1123