ATOMIC ORIGINS OF SURFACE CORE LEVELS ON SI(111)-(7X7) STUDIED BY SITE-DEPENDENT GE SUBSTITUTION

被引：22

作者：

CARLISLE, JA ^{[1
]}

MILLER, T ^{[1
]}

CHIANG, TC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.45.3811

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Synchrotron-radiation photoemission has been used to examine the site-dependent Ge substitution for Si on Si(111)-(7 x 7) surfaces. The surface components of the Si 2p and Ge 3d core levels are analyzed as a function of Ge coverage and annealing temperature. The results show the lower-binding-energy component in the Si 2p core to be derived from adatom emission. Implications in regard to adatom-rest-atom charge transfer are discussed.

引用

页码：3811 / 3814

页数：4

共 19 条

[1]

Arrott A. S., 1988, Metallic Multi-Layers and Epitaxy. Proceedings of a Symposium, P147

[2]

ARTS J, 1988, PHYS REV B, V38, P3925

[3] CORE-LEVEL PHOTOEMISSION-STUDIES OF SURFACES, INTERFACES, AND OVERLAYERS [J].