ELECTRONIC-STRUCTURE OF THE GE(111)-C(2X8) SURFACE

被引：46

作者：

AARTS, J

HOEVEN, AJ

LARSEN, PK

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.37.8190

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8190 / 8197

页数：8

共 25 条

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[4] SURFACE BAND DISPERSION OF GE(111)C(2X8) AND GE(111)-AS 1X1
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[5] NEW C-2X8 UNIT-CELL FOR THE GE(111) SURFACE
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[6] STRUCTURE OF SN/GE(111) FROM LOW-ENERGY ELECTRON-DIFFRACTION AND PHOTOEMISSION-STUDIES
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[7] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492
[8] SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE
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[9] ELECTRONIC-STRUCTURE OF THE ANNEALED GE(111) AND SI(111) SURFACES - SIMILARITIES IN LOCAL BONDING
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REIHL, B
WHITE, CW
ZEHNER, DM
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 1120 - 1123
[10] ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY STUDY OF THE SI(111) SQUARE-ROOT-3X-SQUARE-ROOT-3-SN SURFACE - COMPARISON WITH SI(111) SQUARE-ROOT-3X-SQUARE-ROOT-3-AL, SQUARE-ROOT-3X-SQUARE-ROOT-3-GA, AND SQUARE-ROOT-3XSQUARE-ROOT-3-IN SURFACES
KINOSHITA, T
KONO, S
SAGAWA, T
[J]. PHYSICAL REVIEW B, 1986, 34 (04): : 3011 - 3014

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