NEW METHOD OF DETERMINATION OF A METAL-SEMICONDUCTOR BARRIER HEIGHT

被引：5

作者：

GUINET, C ^{[1
]}

机构：

[1] ECOLE NORMALE SUPER,GRP PHYS SOLIDES,TOUR 23,2 PL JUSSIEU,PARIS 5,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 10期

关键词：

D O I：

10.1063/1.1655327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：600 / 602

页数：3

共 11 条

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[3]

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[4]

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[5]

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[6]

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[7] BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS [J].

SPITZER, WG ;

MEAD, CA .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) :3061-+

[8] HOT ELECTRONS IN METAL FILMS - INJECTION AND CCLLECTION [J].

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[9] HOT-ELECTRON TRANSPORT IN SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J].

SZE, SM ;

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[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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