MAGNETISM IN THE R5IR4SI10 (R = HO AND ER) SYSTEMS

被引：41

作者：

GHOSH, K

RAMAKRISHNAN, S

CHANDRA, G

机构：

[1] Tata Institute of Fundamental Research

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.48.4152

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report the susceptibility and resistivity studies of Er5Ir4Si10 and Ho5Ir4Si10. We find that these compounds undergo antiferromagnetic transitions at 2.5 and 2.0 K, respectively. The effective-moment calculated from the high-temperature susceptibility (Curie-Weiss plot) in each case is equal to the free-ion moment. However, the resistivity of both of these compounds show anomalous behavior in the temperature region 120-200 K, the origin of which is not understood. Similar behavior in resistivity is also seen in Y5Ir4Si10, which is a superconductor at 3.0 K. Finally, the results are compared with that of an antiferromagnet Dy5Ir4Si10.

引用

页码：4152 / 4155

页数：4

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