MICROSTRUCTURE AND THERMAL-CONDUCTIVITY OF SI3N4/SIC NANOCOMPOSITES FABRICATED FROM AMORPHOUS SI-C-N PRECURSOR POWDERS

被引：20

作者：

HIRANO, T ^{[1
]}

IZAKI, K ^{[1
]}

NIIHARA, K ^{[1
]}

机构：

[1] MITSUBISHI GAS CHEM CO, TSUKUBA, IBARAKI, JAPAN

来源：

NANOSTRUCTURED MATERIALS | 1995年 / 5卷 / 7-8期

关键词：

D O I：

10.1016/0965-9773(95)00287-O

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal conductivity of Si3N4/SiC nanocomposites, in which nanosized SiC particulates were dispersed within the matrix grains and/or at the grain boundaries, was evaluated at the temperature range of 293 to 1273 K. The composites were prepared by hot-pressing amorphous Si-C-N precursor powders. The thermal conductivity of the composites decreased slightly with the SiC addition up to about 20 vol.% SiC and then increased, which is markedly different from what was expected from the rule of mixture. This singular behavior of thermal conductivity was attributed to the peculiar microstructure of Si3N4/SiC nanocomposites.

引用

页码：809 / 818

页数：10

共 26 条

[1] THERMAL-CONDUCTIVITY OF CHEMICALLY VAPOUR-DEPOSITED SI3N4-TIN COMPOSITES [J].