LOW THRESHOLD VOLTAGE ZNSE-MN THIN-FILM ELECTROLUMINESCENT CELLS PREPARED BY MOLECULAR-BEAM GROWTH METHOD

被引:10
作者
MISHIMA, T [1 ]
KONAGAI, M [1 ]
TAKAHASHI, K [1 ]
机构
[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
关键词
D O I
10.1109/T-ED.1983.21118
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:282 / 284
页数:3
相关论文
共 5 条
[1]   LOW-TEMPERATURE FORMATION OF POLYCRYSTALLINE SILICON FILMS BY MOLECULAR-BEAM DEPOSITION [J].
MATSUI, M ;
SHIRAKI, Y ;
MARUYAMA, E .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :995-998
[2]   MOLECULAR-BEAM EPITAXIAL ZNSE-MN DC ELECTROLUMINESCENT CELL WITH VERY LOW THRESHOLD VOLTAGE [J].
MISHIMA, T ;
WANG, QK ;
TAKAHASHI, K .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5797-5799
[3]  
OHNISHI H, 1980, JPN J APPL PHYS, V19, P837
[4]  
PANKOVE JI, 1977, ELECTROLUMINESCENCE, P154
[5]  
RUHLE W, 1979, J ELECTRON MAT, V839