GROWTH OF AL AND AL NITRIDE FILMS IN N2-NE AND N2-(NE+AR) DISCHARGES - CONSTRUCTION OF A TERNARY GAS-PHASE DIAGRAM

被引:19
作者
SIETTMANN, JR [1 ]
AITA, CR [1 ]
机构
[1] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期
关键词
D O I
10.1116/1.575276
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1712 / 1716
页数:5
相关论文
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