REACTIONS OF PD ON (100) AND (110) GAAS-SURFACES

被引:75
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KUAN, TS
FREEOUF, JL
BATSON, PE
WILKIE, EL
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10.1063/1.336085
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O59 [应用物理学];
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页码:1519 / 1526
页数:8
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  • [1] ANDERKO K, 1953, Z METALLKD, V44, P307
  • [2] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE
    FREEOUF, JL
    RUBLOFF, GW
    HO, PS
    KUAN, TS
    [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839
  • [3] HELLNER E, 1947, Z NATURFORSCH A, V2, P177
  • [4] HOVEL HJ, UNPUB NASA REPORTS
  • [5] SOME NOTES ON PALLADIUM-SILICON SYSTEM
    NYLUND, A
    [J]. ACTA CHEMICA SCANDINAVICA, 1966, 20 (09): : 2381 - &
  • [6] PALLADIUM ON GAAS - A REACTIVE INTERFACE
    OELHAFEN, P
    FREEOUF, JL
    KUAN, TS
    JACKSON, TN
    BATSON, PE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 588 - 592
  • [7] ELEVATED-TEMPERATURE LOW-ENERGY ION CLEANING OF GAAS
    OELHAFEN, P
    FREEOUF, JL
    PETTIT, GD
    WOODALL, JM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 787 - 790
  • [8] CONTACT REACTIONS IN PD-GAAS JUNCTIONS
    OLOWOLAFE, JO
    HO, PS
    HOVEL, HJ
    LEWIS, JE
    WOODALL, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 955 - 962
  • [9] INTERACTION OF EVAPORATED PALLADIUM THIN-FILMS WITH GALLIUM-ARSENIDE
    OUSTRY, A
    CAUMONT, M
    ESCAUT, A
    MARTINEZ, A
    TOPRASERTPONG, B
    [J]. THIN SOLID FILMS, 1981, 79 (03) : 251 - 256
  • [10] ARSENIDES OF TRANSITION METALS .7. PALLADIUM-ARSENIC SYSTEM
    SAINI, GS
    CALVERT, LD
    TAYLOR, JB
    HEYDING, RD
    [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1964, 42 (03): : 620 - &