CONTACT REACTIONS IN PD-GAAS JUNCTIONS

被引:51
作者
OLOWOLAFE, JO [1 ]
HO, PS [1 ]
HOVEL, HJ [1 ]
LEWIS, JE [1 ]
WOODALL, JM [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.326018
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:955 / 962
页数:8
相关论文
共 20 条
  • [1] CHANG CC, UNPUBLISHED
  • [2] ECKERLIN P, 1971, LANDALTBORNSTEIN GRO, V6, P311
  • [3] ELLIOT RP, 1958, CONSTITUTION BINARY
  • [4] Grove A S, 1967, PHYS TECHNOLOGY SEMI
  • [5] GUPTA D, 1978, THIN FILMS INTERDIFF, pCH8
  • [6] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS
    GYULAI, J
    MAYER, JW
    RODRIGUEZ, V
    YU, AYC
    GOPEN, HJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +
  • [7] QUANTITATIVE AUGER ANALYSIS OF GOLD-COPPER-OXYGEN AND GOLD-NICKEL-OXYGEN SURFACES USING RELATIVE SENSITIVITY FACTORS
    HALL, PM
    MORABITO, JM
    [J]. SURFACE SCIENCE, 1977, 67 (02) : 373 - 392
  • [8] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
  • [9] AUGER STUDY OF PREFERRED SPUTTERING ON BINARY ALLOY SURFACES
    HO, PS
    LEWIS, JE
    WILDMAN, HS
    HOWARD, JK
    [J]. SURFACE SCIENCE, 1976, 57 (01) : 393 - 405
  • [10] DECONVOLUTION METHOD FOR COMPOSITION PROFILING BY AUGER SPUTTERING TECHNIQUE
    HO, PS
    LEWIS, JE
    [J]. SURFACE SCIENCE, 1976, 55 (01) : 335 - 348