MODEL FOR CURRENT PATTERNS IN PHYSICAL SYSTEMS WITH 2 CHARGE-CARRIERS

被引:62
作者
RADEHAUS, C [1 ]
DOHMEN, R [1 ]
WILLEBRAND, H [1 ]
NIEDERNOSTHEIDE, FJ [1 ]
机构
[1] UNIV MUNSTER, INST ANGEW PHYS, W-4400 MUNSTER, GERMANY
来源
PHYSICAL REVIEW A | 1990年 / 42卷 / 12期
关键词
D O I
10.1103/PhysRevA.42.7426
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The temporal and spatial evolution of patterns in physical systems due to electrical current flow can be described for a certain class of systems, which includes certain semiconductor and gas discharge systems, by a two-layer model in terms of the electrical current density and the electrical potential. An equation for the nonlinear layer is derived, the characteristic parameters of which can be obtained from experiments at the respective systems without inhomogeneous patterns lateral to the main current direction. The resulting equation takes into account diffusion and drift effects in the nonlinear layer. It turns out that the drift effects occur only if there is a "net space charge." Two special cases are derived depending on which of the two layers gives the main contribution to the displacement current density, and the typical static and dynamic behavior is studied by numerical calculations. Furthermore, the application of the model to real devices is discussed, and a comparison is made with experimental results obtained with a dc glow-discharge system.
引用
收藏
页码:7426 / 7446
页数:21
相关论文
共 41 条
[11]  
Field RJ., 1985, OSCILLATIONS TRAVELI
[12]   PATTERN FORMATION IN REACTING AND DIFFUSING SYSTEMS [J].
FIFE, PC .
JOURNAL OF CHEMICAL PHYSICS, 1976, 64 (02) :554-564
[13]   A PICTURE OF THE GLOBAL BIFURCATION DIAGRAM IN ECOLOGICAL INTERACTING AND DIFFUSING SYSTEMS [J].
FUJII, H ;
MIMURA, M ;
NISHIURA, Y .
PHYSICA D-NONLINEAR PHENOMENA, 1982, 5 (01) :1-42
[14]  
GAFIICHUK VV, 1988, SOV PHYS SEMICOND+, V22, P1298
[15]  
Gierer A, 1974, LECTURES MATHEMATICS, V7, P163
[16]   A CONTINUUM MODEL OF DC AND RF DISCHARGES [J].
GRAVES, DB ;
JENSEN, KF .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 1986, 14 (02) :78-91
[17]   STABLE MULTIFILAMENT STRUCTURES IN SEMICONDUCTOR-MATERIALS BASED ON A KINETIC-MODEL [J].
KARDELL, K ;
RADEHAUS, C ;
DOHMEN, R ;
PURWINS, HG .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) :6336-6338
[18]  
KERNER BS, 1982, JETP LETT+, V36, P436
[19]  
KERNER BS, 1986, SPRINGER SERIES SYNE, V33
[20]  
KERNER BS, 1980, ZH EKSP TEOR FIZ, V52, P1122