INFLUENCE OF MANGANESE ON LANTHANUM-DOPED BATIO(3)

被引：11

作者：

CHEN, YC ^{[1
]}

LO, GM ^{[1
]}

SHIH, CR ^{[1
]}

WU, L ^{[1
]}

CHEN, MH ^{[1
]}

HUANG, KC ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,DEPT ELECT ENGN,TAINAN,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 3A期

关键词：

PTCR ORDER; PTCR SLOPE; GRAIN GROWTH INHIBITION EFFECT; ACCEPTOR;

D O I：

10.1143/JJAP.33.1412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The minimum room-temperature resistivity for La-Mn-codoped BaTiO3 occurred at [La+3]-5/3[Mn(+x)] approximately 0.35 mol%. Most of the Mn acceptors were in the bulk regions, existing as Mn+2 ions. The others, existing as Mn+3 ions, cause the grain growth inhibition effect and should exist at the grain boundaries, similar to an acceptor level. The slope of the positive temperature coefficient resistance (PTCR) effect (rho160-degrees-C/rho120-degrees-C) Was increased with increasing Mn content. However, the maximum order of PTCR (rho(max)/rho(min)) existed at [Mn+x] approximately 0.06 mol%.

引用

页码：1412 / 1416

页数：5

共 16 条

[1] COMPENSATING DEFECTS IN HIGHLY DONOR-DOPED BATIO3 [J].