ZNCDSE/ZNSE QUANTUM-WELL LASER-DIODE ON A (711)A GAAS SUBSTRATE

被引:11
作者
OHNO, T
KAWAGUCHI, Y
OHKI, A
MATSUOKA, T
机构
[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 10期
关键词
MBE; P-TYPE ZNSE; NITROGEN DOPING; ZNCDSE/ZNSE QUANTUM WELL; TILTED SUBSTRATE;
D O I
10.1143/JJAP.33.5766
中图分类号
O59 [应用物理学];
学科分类号
摘要
For the purpose of increasing the acceptor concentration in p-type ZnSe, nitrogen-doped ZnSe was grown on (n11) GaAs substrates. An acceptor concentration twice as large as that on a (100) substrate was obtained and found to be reproducible, except for (111) substrates, on which ZnSe films showed high resistivity. The PL characteristics of ZnCdSe/ZnSe single quantum wells (SQWs) on a (n11) substrate were also examined. The PL spectrum showed a blue shift mainly caused by the smaller Cd composition on a (n11) substrate than that on a (100) substrate. Finally, a ZnCdSe/ZnSe MQW SCH laser with HR-coated facets, a 900-mu m-long cavity, and a 20-mu m stripe contact was fabricated on a (711)A substrate. The built-in voltage of a LD on the (711)A substrate is 5 V lower than a LD on the (100) substrate. The former oscillated under pulsed operation at 25 degrees C with a threshold current of 3.1 A and an oscillation wavelength of 501 nm.
引用
收藏
页码:5766 / 5773
页数:8
相关论文
共 14 条
[1]   ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES [J].
ASAI, H .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) :425-433
[2]  
CHO AY, 1970, 3RD P INT S GAAS REL, P18
[3]   ENHANCEMENT IN OPTICAL-TRANSITION IN (111)-ORIENTED GAAS-ALGAAS QUANTUM WELL STRUCTURES [J].
HAYAKAWA, T ;
TAKAHASHI, K ;
KONDO, M ;
SUYAMA, T ;
YAMAMOTO, S ;
HIJIKATA, T .
PHYSICAL REVIEW LETTERS, 1988, 60 (04) :349-352
[4]  
HEASE MA, 1991, APPL PHYS LETT, V59, P1272
[5]  
HEASE MA, 1990, J APPL PHYS, V67, P448
[6]   BLUE AND GREEN DIODE-LASERS IN ZNSE-BASED QUANTUM-WELLS [J].
JEON, H ;
DING, J ;
NURMIKKO, AV ;
XIE, W ;
GRILLO, DC ;
KOBAYASHI, M ;
GUNSHOR, RL ;
HUA, GC ;
OTSUKA, N .
APPLIED PHYSICS LETTERS, 1992, 60 (17) :2045-2047
[7]  
KAWAGUCHI Y, 1992, 1992 INT C SOL STAT, P345
[8]  
KRANZER D, 1974, PHYS STATUS SOLIDI A, V26, P548
[9]  
NAKAYAMA N, 1994, ELECTRON LETT, V31, P568
[10]   CHARACTERISTICS OF CL-DOPED ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
OHKAWA, K ;
MITSUYU, T ;
YAMAZAKI, O .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3216-3221