DIMENSIONAL LIMITATIONS OF SILICON NANOLINES RESULTING FROM PATTERN DISTORTION DUE TO SURFACE-TENSION OF RINSE WATER

In a nanometer-scale regime, high-aspect-ratio Si lines running in parallel bend plastically toward each other during the drying process after being rinsed in water. Pattern distortion occurs when the line distance is smaller than the product of the squared aspect ratio and a constant k dependent on the condition of the Si surface, i.e., (distance)<k×(aspectratio)2. This relationship can be derived theoretically on the assumption that water remains between lines and the water pressure is reduced due to the surface tension of water.© 1995 American Institute of Physics.