PATTERNING CHARACTERISTICS OF A CHEMICALLY-AMPLIFIED NEGATIVE RESIST IN SYNCHROTRON RADIATION LITHOGRAPHY

To explore the applicability of synchrotron radiation X-ray lithography for fabricating sub-quartermicron devices, we investigate the patterning characteristics of the chemically-amplified negative resist SAL601 -ER7. Since these characteristics depend strongly on the conditions of the chemical amplification process, the effects of post-exposure baking and developing conditions on sensitivity and resolution are examined. The resolution-limiting factors are investigated, revealing that pattern collapse during the development process and fog caused by Fresnel diffraction, photo-electron scattering, and acid diffusion in the resist determine the resolution and the maximum aspect ratio of the lines and spaces pattern. Using the model of a swaying beam supported at one end, it is shown that pattern collapse depends on the resist pattern's flexural stiffness. Patterning stability, which depends on the delay time between exposure and baking, is also discussed.