CONDUCTION MECHANISMS IN BATIO3 THIN-FILMS

被引：62

作者：

LI, P ^{[1
]}

LU, TM ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.43.14261

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the observation of two types of BaTiO3 thin films, one exhibiting the Poole-Prenkel transport mechanism and the other the field-enhanced Schottky mechanism. A factor-of-2 difference in the slope of the log10(I/V)-vs-V1/2 curves has been measured for these two types of films. Also, we have unambiguously determined that the static dielectric constant should be used to describe the carrier transport in these films.

引用

页码：14261 / 14264

页数：4

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