HIGH-PERFORMANCE (ALAS/N-GAAS SUPERLATTICE)/GAAS 2DEGFETS WITH STABILIZED THRESHOLD VOLTAGE

被引:1
作者
BABA, T [1 ]
MIZUTANI, T [1 ]
OGAWA, M [1 ]
OHATA, D [1 ]
机构
[1] NEC CORP,MICROELECTR RES LABS,FUNDAMENTAL RES LABS,MYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
关键词
D O I
10.1109/T-ED.1984.21826
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1962 / 1962
页数:1
相关论文
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[1]   ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J].
BABA, T ;
MIZUTANI, T ;
OGAWA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L627-L629
[2]   TEMPERATURE-DEPENDENCE OF THE IV CHARACTERISTICS OF MODULATION-DOPED FETS [J].
VALOIS, AJ ;
ROBINSON, GY ;
LEE, K ;
SHUR, MS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :190-195