TEMPERATURE-DEPENDENCE OF THE IV CHARACTERISTICS OF MODULATION-DOPED FETS

[1] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960

[2] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1238 - 1240

[3] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341

[4] DRUMMOND TJ, 1982, IEDM TECH DIG, V25, P586

[5] EXTREMELY HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : L245 - L248

[6] Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[7] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639

[8] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L598 - L600

[9] LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 351 - 353

[10] ROCHETTE JF, 1982, 1982 INT S GAAS REL

[1] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960

[2] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1238 - 1240

[3] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341

[4] DRUMMOND TJ, 1982, IEDM TECH DIG, V25, P586

[5] EXTREMELY HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : L245 - L248

[6] Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[7] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639

[8] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L598 - L600

[9] LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 351 - 353

[10] ROCHETTE JF, 1982, 1982 INT S GAAS REL