INTEGRATED LASER PHOTOTRANSISTOR OPTOELECTRONIC SWITCHING DEVICE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：12

作者：

SCHAUS, CF ^{[1
]}

SHEALY, JR ^{[1
]}

NAJJAR, FE ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 09期

关键词：

SEMICONDUCTOR MATERIALS - TRANSISTORS; BIPOLAR; -; TRANSISTORS; PHOTOSENSITIVE;

D O I：

10.1049/el:19860309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Computer-controlled organometallic vapour phase epitaxy has been used to optimise AlGaAs/GaAs quantum well lasers and bipolar phototransistors separately. The two structures are combined in a single growth to realise a high-performance two-terminal optoelectronic switch. DC I/V characteristics are typical of an npnp structure; however, the feedback mechanism is optical rather than electronic. Threshold switching voltage is determined by the optical input in the range 1. 3-23 v and sensitivity is 2. 5 v/ mu w. Output is both optical (laser) and electrical current. Gain is provided by the phototransistor and optical feedback and exceeds 10**4. Switching speed is less than 1 ns.

引用

页码：454 / 456

页数：3