MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC INAS/IN0.52 AL0.48 AS QUANTUM WELLS

被引：18

作者：

DEMIGUEL, JL

MEYNADIER, MH

TAMARGO, MC

NAHORY, RE

HWANG, DM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584414

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：617 / 619

页数：3

共 7 条

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[3]

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[4] OPTICAL INVESTIGATIONS OF THE BAND-STRUCTURE OF STRAINED INAS/ALLNAS QUANTUM WELLS [J].

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[5] LATTICE-RELAXATION OF INAS HETEROEPITAXY ON GAAS [J].

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[6]

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[7] GROWTH OF A NOVEL INAS-GAAS STRAINED LAYER SUPERLATTICE ON INP [J].

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APPLIED PHYSICS LETTERS, 1985, 46 (06) :569-571

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