GROWTH OF A NOVEL INAS-GAAS STRAINED LAYER SUPERLATTICE ON INP

被引：54

作者：

TAMARGO, MC ^{[1
]}

HULL, R ^{[1
]}

GREENE, LH ^{[1
]}

HAYES, JR ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.95542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：569 / 571

页数：3

共 8 条

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CHO, AY
DRUMMOND, TJ
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149
[2] ELECTRON MOBILITIES IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPER-LATTICES
FRITZ, IJ
DAWSON, LR
ZIPPERIAN, TE
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 846 - 848
[3] GRUNTHANER FJ, 1984, INT C SUPERLATTICES
[4] Hayes J. R., 1982, GaInAsP alloy semiconductors, P189
[5] MATHEWS JW, 1974, J CRYST GROWTH, V27, P118
[6] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS
OSBOURN, GC
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1586 - 1589
[7] NUCLEATION AND STRAIN RELAXATION AT THE INAS/GAAS(100) HETEROJUNCTION
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LIND, MD
KOWALCZYK, SP
GRANT, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 688 - 695
[8] YAO T, 1983, JPN J APPL PHYS, V22, P680