ZN INCORPORATION IN GA1-XALX AS GROWN BY LIQUID-PHASE EPITAXY AND ITS ELECTRICAL-PROPERTIES

被引：5

作者：

VASSILIEFF, G

SAINTCRICQ, B

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 08期

关键词：

D O I：

10.1063/1.332660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4581 / 4585

页数：5

共 9 条

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[6] DOPING AND ELECTRICAL-PROPERTIES OF MG IN LPE A1XGA1-XAS [J].

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[7]

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[8]

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[9]

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