UNIQUE BAND BENDING AT THE SB/INP(110) INTERFACE

被引：9

作者：

KENDELEWICZ, T

CAO, R

MIYANO, K

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575836

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：765 / 769

页数：5

共 24 条

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[2] PHOTOEMISSION INVESTIGATION OF SB/GAAS(110) INTERFACES [J].

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SPICER, WE .

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[5]

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[7] THE INP(110)/SB INTERFACE - OHMIC BEHAVIOR AT LARGE SB COVERAGES [J].

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[9] SCHOTTKY BARRIERS ON ATOMICALLY CLEAN N-INP (110) [J].

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[10] SURFACE SHIFTS IN THE IN 4D AND P 2P CORE-LEVEL SPECTRA OF INP(110) [J].

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