MODE-MIXING IN AN X-RAY THIN-FILM WAVE-GUIDE

被引:11
作者
FENG, YP
DECKMAN, HW
SINHA, SK
机构
[1] Exxon Research and Engineering Company, Annandale
关键词
D O I
10.1063/1.110975
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mode-mixing in a thin-film x-ray waveguide with 4-6 Angstrom interfacial roughness was analyzed using a formalism based on the coupled power theory for optical waveguides. The mode mixing was found to occur between nearest-neighbor modes with a uniform probability of similar to 1.1% per bounce. The small mixing probability and the nearest-neighbor selection rule are consistent with a mixing mechanism arising from diffuse scattering, which at subcritical angles of incidence displays dramatically different behavior in x-ray waveguides than in optical counterparts.
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页码:930 / 932
页数:3
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