EFFECT OF FREE-ELECTRON TERMS ON THE G-FACTOR OF CD3AS2

被引：12

作者：

SINGH, M ^{[1
]}

WALLACE, PR ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,SERV CHAMPS MAGNET INTENSES,F-31077 TOULOUSE,FRANCE

来源：

关键词：

D O I：

10.1016/0038-1098(83)90873-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：9 / 11

页数：3

共 6 条

[1] ANISOTROPY OF THE ELECTRONIC G-STAR-FACTOR IN CADMIUM ARSENIDE [J].

BLOM, FAP ;

CREMERS, JW ;

NEVE, JJ ;

GELTEN, MJ .

[2]

Bodnar J., 1977, P C NARROW GAP SEMIC, P311

[3]

PONOMAREV AI, 1979, SOV PHYS SEMICOND+, V13, P502

[4]

SINGH M, 1982, 16TH P INT C SEM MON

[5] ELECTRONIC G-FACTOR IN CD3AS2 [J].

WALLACE, PR .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 92 (01) :49-55

[6]

Zawadzki W., 1973, New Developments in semiconductors, P441