ELECTRONIC G-FACTOR IN CD3AS2

被引:76
作者
WALLACE, PR [1 ]
机构
[1] INST NATL SCI APPL LYON,CHAMPS PULSES LAB,F-31077 TOULOUSE,FRANCE
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 92卷 / 01期
关键词
D O I
10.1002/pssb.2220920106
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using the Bodnar model, the effective mass, density of states, and g‐factor of Cd3As2 are calculated. It is found that the g‐factor is considerably more anisotropic than the effective mass, but decreases sharply with energy in all directions. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:49 / 55
页数:7
相关论文
共 8 条
[1]  
AUBIN MJ, 1977, P C NARROW GAP SEMIC
[2]  
BODNAR J, 1977, P C NARROW GAP SEMIC
[3]  
CARON LG, 1977, PHYS REV B, V15, P3579
[4]  
HOULBERT C, 1978, THESIS TOULOUSE
[5]   DEPENDENCE OF G-FACTOR ON ELECTRON-CONCENTRATION IN CADMIUM ARSENIDE AT LOW-TEMPERATURES [J].
JAYGERIN, JP ;
LAKHANI, AA .
JOURNAL OF LOW TEMPERATURE PHYSICS, 1977, 28 (1-2) :15-20
[6]   BAND-STRUCTURE OF CDGEAS2 NEAR K-]=O [J].
KILDAL, H .
PHYSICAL REVIEW B, 1974, 10 (12) :5082-5087
[8]  
ZAWADZKI W, 1973, NEW DEV SEMICONDUCTO, P443