THE ELECTRONIC CONFIGURATION OF AMPHOTERIC SN DOPANTS IN III-V COMPOUND SEMICONDUCTORS

被引：20

作者：

WEYER, G ^{[1
]}

PETERSEN, JW ^{[1
]}

DAMGAARD, S ^{[1
]}

机构：

[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90293-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：470 / 473

页数：4

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