INTERNAL ELECTRONIC CONFIGURATION OF SN DONORS AND ACCEPTORS IN A-IIIB-V COMPOUNDS

被引:5
作者
ANTONCIK, E
GU, BL
机构
来源
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词
D O I
10.1016/0378-4363(83)90239-5
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
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收藏
页码:127 / 130
页数:4
相关论文
共 7 条
[1]   COVALENCY AND COMPRESSION EFFECTS ON THE ISOMER-SHIFT OF SUBSTITUTIONAL SN-119 IMPURITIES IN GROUP IV SEMICONDUCTORS [J].
ANTONCIK, E .
HYPERFINE INTERACTIONS, 1981, 11 (03) :265-278
[2]  
ANTONCIK E, UNPUB
[3]   WAVE FUNCTIONS FOR IMPURITY LEVELS [J].
KOSTER, GF ;
SLATER, JC .
PHYSICAL REVIEW, 1954, 95 (05) :1167-1176
[4]   SIMPLIFIED IMPURITY CALCULATION [J].
KOSTER, GF ;
SLATER, JC .
PHYSICAL REVIEW, 1954, 96 (05) :1208-1223
[5]  
Shenoy G.F., 1978, MOSSBAUER ISOMER SHI
[6]   THE ELECTRONIC CONFIGURATION OF AMPHOTERIC SN DOPANTS IN III-V COMPOUND SEMICONDUCTORS [J].
WEYER, G ;
PETERSEN, JW ;
DAMGAARD, S .
PHYSICA B & C, 1983, 116 (1-3) :470-473
[7]   SITE-SELECTIVE DOPING OF COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION OF RADIOACTIVE NUCLEI [J].
WEYER, G ;
PETERSEN, JW ;
DAMGAARD, S ;
NIELSEN, HL ;
HEINEMEIER, J .
PHYSICAL REVIEW LETTERS, 1980, 44 (03) :155-157