PHYSICAL-PROPERTIES OF THE DEEP X-ELECTRON TRAP RESPONSIBLE FOR LONG-TIME PERSISTENT PHOTOCAPACITANCE IN CDS

被引：3

作者：

HOUSIN, M

FIALIN, M

SAGNES, G

BASTIDE, G

ROUZEYRE, M

机构：

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90468-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：155 / 159

页数：5

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[8] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

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