NEW GA-INDUCED SUPERSTRUCTURES ON SI(111) SURFACES

被引：48

作者：

OTSUKA, M

ICHIKAWA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 08期

关键词：

D O I：

10.1143/JJAP.24.1103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1103 / 1104

页数：2

相关论文

共 4 条

[1] ROOM-TEMPERATURE ADSORPTION AND GROWTH OF GA AND IN ON CLEAVED SI(111)
BOLMONT, D
CHEN, P
SEBENNE, CA
PROIX, F
[J]. SURFACE SCIENCE, 1984, 137 (01) : 280 - 292
[2] RHEED STUDY ON THE GE/SI(111) AND SI/GE(111) SYSTEMS - REACTION OF GE WITH THE SI(111)(7X7) SURFACE
ICHIKAWA, T
INO, S
[J]. SURFACE SCIENCE, 1984, 136 (2-3) : 267 - 284
[3] STRUCTURAL STUDY OF SN-INDUCED SUPERSTRUCTURES ON GE(111) SURFACES BY RHEED
ICHIKAWA, T
INO, S
[J]. SURFACE SCIENCE, 1981, 105 (2-3) : 395 - 428
[4] KAWAZU A, 1980, VIDE COUCHES MINCE S, V201, P1015