OPTICAL PHOTOGENERATED TRAPS IN SEMI-INSULATING GAAS BULK MATERIAL

被引：4

作者：

BONNAFE, J ^{[1
]}

JIMENEZ, J ^{[1
]}

GONZALEZ, M ^{[1
]}

CASTAGNE, M ^{[1
]}

机构：

[1] FAC CIENCIAS VALLADOLID,FIS ESTADO SOLIDO LAB,VALLADOLID,SPAIN

来源：

PHYSICA SCRIPTA | 1984年 / 30卷 / 03期

关键词：

D O I：

10.1088/0031-8949/30/3/007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：198 / 200

页数：3

共 15 条

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GUILLOT, G ;

HENNEL, AM ;

HUBER, AM ;

JOUGLAR, J ;

LEYRAL, P ;

MANIFACIER, JC ;

MARTINEZ, G ;

PICOLI, G ;

ROIZES, A ;

SCHWAB, C ;

VISENTIN, N ;

VUILLERMOZ, PL .

MATERIALS RESEARCH BULLETIN, 1981, 16 (10) :1193-1212

[2] VERY LOW-TEMPERATURE TSC TRAP SPECTROSCOPY [J].

BONNAFE, J ;

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FILLARD, JP .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (18) :2465-2472

[3] EVIDENCE FOR A SHALLOW LEVEL STRUCTURE IN THE BULK OF SEMI-INSULATING GAAS [J].

CASTAGNE, M ;

BONNAFE, J ;

MANIFACIER, JC ;

FILLARD, JP .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4894-4897

[4] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].

CHANTRE, A ;

VINCENT, G ;

DUBOIS .

PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359

[5] A SPECIFIC TRAP LEVEL AT 78 MEV IN UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GROWN GAAS-SI MATERIALS [J].

FILLARD, JP ;

CASTAGNE, M ;

BONNAFE, J ;

DEMURCIA, M .

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[6]

HOBGOOD HM, 1982, SEMIINSULATING 3 5 M, P28

[7]

HOLMES DE, 1982, SEMIINSULATING 3 5 M, P19

[8] A STUDY ON THE PHOTOCONDUCTIVITY OF A SET OF HORIZONTAL BRIDGMAN SEMI-INSULATING GAAS INGOTS [J].

JIMENEZ, J ;

GONZALEZ, MA ;

DESAJA, JA ;

BONNAFE, J .

JOURNAL OF MATERIALS SCIENCE, 1984, 19 (04) :1207-1219

[9]

JIMENEZ J, 1982, J PHYS STATUS SOLI A, V73, pK189

[10]

LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904

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