A SPECIFIC TRAP LEVEL AT 78 MEV IN UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GROWN GAAS-SI MATERIALS

被引：17

作者：

FILLARD, JP

CASTAGNE, M

BONNAFE, J

DEMURCIA, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 11期

关键词：

D O I：

10.1063/1.331872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：6767 / 6770

页数：4

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