ESTIMATION OF MISFIT STRAIN IN EPITAXIALLY GROWN ZNSE/GAAS WITH 2-PHOTON ABSORPTION-SPECTROSCOPY

被引：9

作者：

MINAMI, F ^{[1
]}

KATO, Y ^{[1
]}

YOSHIDA, K ^{[1
]}

INOUE, K ^{[1
]}

ERA, K ^{[1
]}

机构：

[1] NATL INST RES INORGAN MAT, TSUKUBA, IBARAKI 305, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90814-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Two-photon absorption spectroscopy is used as a novel tool to study residual strain in ZnSe epitaxial layers grown on GaAs substrates. Taking advantage of the polarization selection rules, we find that ZnSe layers thicker than 2-mu-m suffer in-plane tensile strain of the order of 10(-4), while the epilayer thinner than 1-mu-m undergoes biaxial compression. The measured thickness dependence of misfit strains is compared to that obtained from X-ray diffraction.

引用

页码：565 / 568

页数：4

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