EPR EVIDENCE FOR A POSITIVELY CHARGED VACANCY-OXYGEN DEFECT IN SILICON

被引：6

作者：

BROSIOUS, PR ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.89040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：265 / 267

页数：3

共 14 条

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[4] BROSIOUS P, UNPUBLISHED
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[6] ELECTRON PARAMAGNETIC RESONANCE OF NEUTRAL (S=1) ONE-VACANCY-OXYGEN CENTER IN IRRADIATED SILICON
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[7] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER
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[8] ELECTRON BOMBARDMENT OF SILICON
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[9] EPR STUDIES IN NEUTRON-IRRADIATED SILICON - NEGATIVE CHARGE STATE OF A NONPLANAR 5-VACANCY CLUSTER (V5-)
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[J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2810 - 2826
[10] Phillips J. C., 1970, Comments on Solid State Physics, V3, P67