SIGE PMOSFETS WITH GATE OXIDE FABRICATED BY MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING

被引：43

作者：

LI, PW ^{[1
]}

YANG, ES ^{[1
]}

YANG, YF ^{[1
]}

CHU, JO ^{[1
]}

MEYERSON, BS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 10期

关键词：

D O I：

10.1109/55.320982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate quality oxide directly on SiGe alloys. One mu m Al gate Si0.88Ge0.15 p-metal-oxide-semiconductor field-effect-transistors (pMOSFET's) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm(2)/V-s at 300 K and 530 cm(2)/V-s at 77 K have been obtained.

引用

页码：402 / 405

页数：4