NOVEL SILICON WAVE-GUIDE SWITCH BASED ON TOTAL INTERNAL-REFLECTION

被引:34
作者
LIU, YL [1 ]
LIU, E [1 ]
LI, GZ [1 ]
ZHANG, SL [1 ]
LUO, JS [1 ]
ZHOU, F [1 ]
CHENG, MQ [1 ]
LI, BC [1 ]
GE, HA [1 ]
机构
[1] NATL RES CTR OPTOELECTR TECHNOL,BEIJING 100083,PEOPLES R CHINA
关键词
D O I
10.1063/1.111689
中图分类号
O59 [应用物理学];
学科分类号
摘要
Novel silicon asymmetric optical switches with transverse injection structure have been proposed and fabricated which are based on total internal reflection and free-carrier effect. The switches have a quite short operation length of about 200 mum. The device performance was measured at the wavelength of 1.3 mum. It shows that the crosstalk is less than -11.4 dB at an injection current of 85 mA. Response time is 100 ns. They are very suitable for silicon monolithic optoelectronic integration
引用
收藏
页码:2079 / 2080
页数:2
相关论文
共 4 条
[1]  
ENKE L, 1992, PHOTONICS 92
[2]   INGAASP-INP OPTICAL SWITCHES USING CARRIER INDUCED REFRACTIVE-INDEX CHANGE [J].
ISHIDA, K ;
NAKAMURA, H ;
MATSUMURA, H ;
KADOI, T ;
INOUE, H .
APPLIED PHYSICS LETTERS, 1987, 50 (03) :141-142
[3]   1.3 MU-M ELECTROOPTIC SILICON SWITCH [J].
LORENZO, JP ;
SOREF, RA .
APPLIED PHYSICS LETTERS, 1987, 51 (01) :6-8
[4]  
MIKAMI O, 1984, ELECTRON LETT, V20, P229