1.3 MU-M ELECTROOPTIC SILICON SWITCH

[1] ELAKKARI FR, 1980, TOPICAL M INTEGRATED

[2] THE CARRIER-INDUCED INDEX CHANGE IN ALGAAS AND 1.3 MU-M INGAASP DIODE-LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (10) : 1525 - 1530

[3] MIKAMI O, 1984, ELECTRON LETT, V20, P229

[4] SANKIN VI, 1970, SOV PHYS SEMICOND+, V3, P1523

[5] Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components [J]. ELECTRONICS LETTERS, 2009, : 26 - 27

[6] ALL-SILICON ACTIVE AND PASSIVE GUIDED-WAVE COMPONENTS FOR lambda equals 1. 3 AND 1. 6 mu M. [J]. IEEE Journal of Quantum Electronics, 1986, QE-22 (06) : 873 - 879

[7] ELECTROOPTICAL EFFECTS IN SILICON [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (01) : 123 - 129

[8] SOREF RA, 1986, FEB INT GUID WAV OPT, P18

[1] ELAKKARI FR, 1980, TOPICAL M INTEGRATED

[2] THE CARRIER-INDUCED INDEX CHANGE IN ALGAAS AND 1.3 MU-M INGAASP DIODE-LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (10) : 1525 - 1530

[3] MIKAMI O, 1984, ELECTRON LETT, V20, P229

[4] SANKIN VI, 1970, SOV PHYS SEMICOND+, V3, P1523

[5] Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components [J]. ELECTRONICS LETTERS, 2009, : 26 - 27

[6] ALL-SILICON ACTIVE AND PASSIVE GUIDED-WAVE COMPONENTS FOR lambda equals 1. 3 AND 1. 6 mu M. [J]. IEEE Journal of Quantum Electronics, 1986, QE-22 (06) : 873 - 879

[7] ELECTROOPTICAL EFFECTS IN SILICON [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (01) : 123 - 129

[8] SOREF RA, 1986, FEB INT GUID WAV OPT, P18