780 NM ALGAAS DFB LASERS FABRICATED BY MOCVD

被引：4

作者：

HIRATA, S

NARUI, H

KUMAGAI, O

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 04期

关键词：

D O I：

10.1049/el:19880161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：239 / 240

页数：2

相关论文

共 3 条

[1] YIELD DEPENDENCY ON LENGTH OF ALGAAS/GAAS SECOND-ORDER DISTRIBUTED FEEDBACK LASERS WITH CLEAVED FACETS [J].

HIRATA, S ;

OHATA, T ;

YAMAMOTO, T ;

KOJIMA, C .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1475-1477

[2] LOW THRESHOLD CURRENT ALGAAS/GAAS RIB-WAVE-GUIDE SEPARATE-CONFINEMENT-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HONDA, K ;

HIRATA, S ;

OHATA, T ;

HORII, S ;

KOJIMA, C .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :839-842

[3] CONTINUOUS ROOM-TEMPERATURE OPERATION OF A 759-NM GAALAS DISTRIBUTED FEEDBACK LASER [J].

TAKIGAWA, S ;

KUME, M ;

HAMADA, K ;

TATEOKA, K ;

NAITOH, H ;

YOSHIKAWA, N ;

YAMAMOTO, A ;

SHIMIZU, H ;

ITOH, K .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1580-1581