LASER RECRYSTALLIZATION OF SILICON STRIPES IN SIO2 GROOVES WITH A POLYCRYSTALLINE SILICON SUBLAYER

[1] ORIENTATION SELECTION BY ZONE-MELTING SILICON FILMS THROUGH PLANAR CONSTRICTIONS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 747 - 749

[2] Biegelsen D. K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P487

[3] LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 150 - 152

[4] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 346 - 347

[5] SOLIDIFICATION-FRONT MODULATION TO ENTRAIN SUBBOUNDARIES IN ZONE-MELTING RECRYSTALLIZATION OF SI ON SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1178 - 1183

[6] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74

[7] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 831 - 833

[8] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216

[9] RECRYSTALLIZATION OF SI ON AMORPHOUS SUBSTRATES BY DOUGHNUT-SHAPED CW AR LASER-BEAM [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 394 - 395

[10] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208

[1] ORIENTATION SELECTION BY ZONE-MELTING SILICON FILMS THROUGH PLANAR CONSTRICTIONS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 747 - 749

[2] Biegelsen D. K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P487

[3] LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 150 - 152

[4] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 346 - 347

[5] SOLIDIFICATION-FRONT MODULATION TO ENTRAIN SUBBOUNDARIES IN ZONE-MELTING RECRYSTALLIZATION OF SI ON SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1178 - 1183

[6] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74

[7] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 831 - 833

[8] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216

[9] RECRYSTALLIZATION OF SI ON AMORPHOUS SUBSTRATES BY DOUGHNUT-SHAPED CW AR LASER-BEAM [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 394 - 395

[10] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208