ORIENTATION SELECTION BY ZONE-MELTING SILICON FILMS THROUGH PLANAR CONSTRICTIONS

被引：15

作者：

ATWATER, HA ^{[1
]}

SMITH, HI ^{[1
]}

GEIS, MW ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 08期

关键词：

D O I：

10.1063/1.93664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：747 / 749

页数：3

共 11 条

[1]

BEZJIAN KA, 1982, J ELECTROCHEM SOC, V129, P1849

[2]

Biegelsen D. K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P487

[3]

BOSCH MA, 1982, JUL EL MAT C FORT CO

[4] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

MABY, EW ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :158-160

[5]

GEIS MW, UNPUB J ELECTROCHEM

[6]

GEIS MW, UNPUB

[7] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J].

MABY, EW ;

GEIS, MW ;

LECOZ, YL ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

ANTONIADIS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (10) :241-243

[8] ELECTRICAL-PROPERTIES OF LINE DEFECTS IN THIN ZONE-RECRYSTALLIZED SILICON FILMS ON SILICON DIOXIDE [J].

MABY, EW ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :691-693

[9] SUBGRAIN BOUNDARIES IN LATERALLY SEEDED SILICON-ON-OXIDE FORMED BY GRAPHITE STRIP HEATER RECRYSTALLIZATION [J].

PINIZZOTTO, RF ;

LAM, HW ;

VAANDRAGER, BL .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :388-390

[10] STRESS-ENHANCED CARRIER MOBILITY IN ZONE-MELTING RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO-2-COATED SUBSTRATES [J].

TSAUR, BY ;

FAN, JCC ;

GEIS, MW .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :322-324

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