PHYSICAL-PROPERTIES OF BI4TI3O12 FILMS GROWN ON SI(100) WAFERS

被引：12

作者：

YAMAGUCHI, M

NAGATOMO, T

OMOTO, O

机构：

[1] Department of Electronics Engineering, Shibaura Institute of Technology, Minato-ku, 108

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

THIN FILMS; BI4TI3O12; RF PLANAR MAGNETRON SPUTTERING; C-AXIS ORIENTATION; THICKNESS DEPENDENCE;

D O I：

10.1143/JJAP.34.5116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth titanate (Bi4Ti3O12) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi2TiO5 ceramic. C-axis-oriented Bi4Ti3O12 films were grown on Si(100) at a law substrate temperature of 550 degrees C. However, these films did not exhibit ferroelectricity, and the dielectric constant epsilon(r) and dissipation factor tan delta were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior was assuming supposing a low-dielectric-constant interface layer. These films showeded the dielectric breakdown field of about 21 kV/cm.

引用

收藏

页码：5116 / 5119

页数：4

相关论文

共 17 条

[1] FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED PB(ZR, TI)O3 THIN-FILMS [J].

AMANUMA, K ;

MORI, T ;

HASE, T ;

SAKUMA, T ;

OCHI, A ;

MIYASAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (9B) :4150-4153

[2] OXYGEN-OCTAHEDRA FERROELECTRICS .I. THEORY OF ELECTRO-OPTICAL AND NONLINEAR OPTICAL EFFECTS [J].

DIDOMENICO, M ;

WEMPLE, SH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :720-+

[3] CRYSTAL-STRUCTURE OF BI4TI3O12 [J].

DORRIAN, JF ;

NEWNHAM, RE ;

KAY, MI ;

SMITH, DK .

FERROELECTRICS, 1971, 3 (01) :17-&

[4] RESEARCH STATUS AND DEVICE POTENTIAL OF FERROELECTRIC THIN-FILMS [J].

FRANCOMBE, MH .

FERROELECTRICS, 1972, 3 (2-3-) :199-+

[5] FILM THICKNESS DEPENDENCE OF DIELECTRIC PROPERTY AND CRYSTAL-STRUCTURE OF PBTIO3 FILM PREPARED ON PT SIO2 SI SUBSTRATE BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

FUNAKUBO, H ;

HIOKI, T ;

OTSU, M ;

SHINOZAKI, K ;

MIZUTANI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4175-4178

[6] PREPARATION OF PB(ZR, TI)O3 THIN-FILMS BY MULTITARGET SPUTTERING [J].

HASE, T ;

SAKUMA, T ;

MIYASAKA, Y ;

HIRATA, K ;

HOSOKAWA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4061-4064

[7] GROWTH OF HIGHLY ORIENTED BI4TI3O12(104) THIN-FILMS ON AL2O3(0001) SUBSTRATES USING PULSED-LASER DEPOSITION [J].

JO, W ;

NOH, TW .

APPLIED PHYSICS LETTERS, 1994, 65 (22) :2780-2782

[8] PREPARATION OF BI4TI3O12 FILMS ON A SINGLE-CRYSTAL SAPPHIRE SUBSTRATE WITH ELECTRON-CYCLOTRON RESONANCE PLASMA SPUTTERING [J].

MASUMOTO, H ;

GOTO, T ;

MASUDA, Y ;

BABA, A ;

HIRAI, T .

APPLIED PHYSICS LETTERS, 1991, 58 (03) :243-245

[9] EFFECTS OF OXYGEN CONCENTRATION ON GROWTH OF BI4TI3O12 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

MUHAMMET, R ;

NAKAMURA, T ;

SHIMIZU, M ;

SHIOSAKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5215-5218

[10]

Nagatomo T., 1994, Ferroelectrics, V152, P133, DOI 10.1080/00150199408017609