EFFECTS OF OXYGEN CONCENTRATION ON GROWTH OF BI4TI3O12 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：31

作者：

MUHAMMET, R

NAKAMURA, T

SHIMIZU, M

SHIOSAKI, T

机构：

[1] ROHM CO LTD,UKYO KU,KYOTO 615,JAPAN

[2] KYOTO UNIV,FAC ENGN,DEPT ELECTR,SAKYO KU,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期

关键词：

BI4TI3O12; THIN FILM; MOCVD; AFM IMAGE; FERROELECTRIC; MFS-FET;

D O I：

10.1143/JJAP.33.5215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of oxygen concentration on the growth of Bi4Ti3O12 thin films by metalorganic chemical vapor deposition (MOCVD) were investigated, using Bi(C6H5)(3) and Ti(i-OC3H7)(4) precursor, c-axis-oriented Bi4Ti3O12 thin films were obtained at an oxygen gas flow rate of 200 seem and a substrate temperature of 600 degrees C on Pt(111)/SiO2/ Si(100) substrates without Bi2Ti2O7 buffer layers. This film shows remanent polarization of 1.3 mu C/cm(2), coercive field of 25 kV/cm, dielectric constant of 130 and leakage current density as low as 10(-8)-10(-7) A/cm(2)

引用

页码：5215 / 5218

页数：4

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