HIGH-VOLTAGE TWO-DIMENSIONAL SIMULATIONS OF PERMEABLE BASE TRANSISTORS

[1] Alley G. D., 1980, International Electron Devices Meeting. Technical Digest, P608

[2] ALLEY GD, 40TH ANN DEV RES C I

[3] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[4] BOZLER CO, 1982, P IEEE, V20, P46

[5] TRANSIENT VELOCITY CHARACTERISTICS OF ELECTRONS IN GAAS WITH GAMMA-L-X CONDUCTION-BAND ORDERING [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4064 - 4068

[6] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 64 - +

[7] COMPUTER-AIDED 2-DIMENSIONAL ANALYSIS OF BIPOLAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) : 669 - 679

[8] Stillman G. E., 1977, Proceedings of the 6th International Symposium on Gallium Arsenide and Related Compounds, P185

[1] Alley G. D., 1980, International Electron Devices Meeting. Technical Digest, P608

[2] ALLEY GD, 40TH ANN DEV RES C I

[3] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[4] BOZLER CO, 1982, P IEEE, V20, P46

[5] TRANSIENT VELOCITY CHARACTERISTICS OF ELECTRONS IN GAAS WITH GAMMA-L-X CONDUCTION-BAND ORDERING [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4064 - 4068

[6] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 64 - +

[7] COMPUTER-AIDED 2-DIMENSIONAL ANALYSIS OF BIPOLAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) : 669 - 679

[8] Stillman G. E., 1977, Proceedings of the 6th International Symposium on Gallium Arsenide and Related Compounds, P185