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MOS-TYPE MICRO-OXYGEN SENSOR USING LAF3 WORKABLE AT ROOM-TEMPERATURE

被引：16
作者：
KATSUBE, T
HARA, M
SERIZAWA, I
ISHIBASHI, N
ADACHI, N
MIURA, N
YAMAZOE, N
机构：
[1] ORC MFG CO LTD, CHOFU 182, JAPAN
[2] KYUSHU UNIV, GRAD SCH ENGN SCI, KASUGA, FUKUOKA 816, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 08期
关键词：
Laf[!sub]3[!/sub; Micro-oxygen sensor; Mos-type sensor; Oxygen sensor; Room temperature sensor; Solid electrolyte;
D O I：
10.1143/JJAP.29.L1392
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A sputtered LaF3film was applied to construct a semiconductor micro-oxygen sensor consisting of a Pt/LaF3/SiO2/n-Si/Al structure. The sensor showed a stable response in the oxygen partial pressure range of 0.1-1.0 atm at ambient temperature. The sensitivity and response time strongly depended on the fabrication conditions of LaF3and Pt films, and the optimum sputtering conditions to prepare the films were investigated. It was also demonstrated that water vapor treatment was effective in improving the response rate and the response reversibility. © 1990 IOP Publishing Ltd.
引用
收藏
页码：L1392 / L1395
页数：4
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